RQ3E120GNTB

Specifications

Terminal Pozisyonu

DUAL

Rds On Max Id Vgs

8.8m Ω @ 12A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

REACH Uyumluluk Kodu

not_compliant

Gate To Source Voltage Vgs

20V

Kurşunsuz

Lead Free

Vgsth Max Id

2.5V @ 1mA

Çalışma Sıcaklığı

150°C TJ

Fall Time Typ

3.4 ns

Power Dissipation Max

2W Ta 16W Tc

Element Configuration

Single

Turn On Delay Time

9.6 ns

Rise Time

4.5ns

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Fabrika Tedarik Süresi

20 Weeks

Montaj Tipi

Surface Mount

Ds Breakdown Voltagemin

30V

Vgs Max

±20V

Ambalaj

Tape & Reel (TR)

Turn Off Delay Time

25.5 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

10nC @ 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Number Of Channels

1

Pin Sayısı

8

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Current Continuous Drain Id25

12A Ta

Terminal Formu

FLAT

Transistor Element Material

SILICON

Kılıf / Paket

8-PowerVDFN

Jesd30 Code

R-PDSO-F5

Input Capacitance Ciss Max Vds

590pF @ 15V

Number Of Elements

1

Transistor Application

SWITCHING

Continuous Drain Current Id

12A

Drive Voltage Max Rds On Min Rds On

4.5V 10V