RQ3E120ATTB

Specifications

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3

Rds On Max Id Vgs

8m Ω @ 12A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

2.5V @ 1mA

Power Dissipation Max

2W Ta

Çalışma Sıcaklığı

150°C TJ

Fet Type

P-Channel

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

20 Weeks

Ds Breakdown Voltagemin

30V

Vgs Max

±20V

Ambalaj

Cut Tape (CT)

Terminal Kaplaması

Tin (Sn)

ECCN Kodu

EAR99

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

8

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

62nC @ 10V

Drainsource On Resistancemax

0.0113Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

FLAT

Current Continuous Drain Id25

12A Ta

Kılıf / Paket

8-PowerVDFN

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-F5

Input Capacitance Ciss Max Vds

3200pF @ 15V

Number Of Elements

1

Yayın Yılı

2015

Terminal Sayısı

5

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Transistor Application

SWITCHING

Continuous Drain Current Id

12A

Case Connection

DRAIN

Drain To Source Voltage Vdss

30V