Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgsth Max Id
- 2.5V @ 1mA
- Kurşunsuz
- Lead Free
- Gate To Source Voltage Vgs
- 20V
- Fall Time Typ
- 2.4 ns
- Power Dissipation Max
- 2W Ta 15W Tc
- Çalışma Sıcaklığı
- 150°C TJ
- Pulsed Drain Currentmax Idm
- 32A
- Rds On Max Id Vgs
- 16.7m Ω @ 8A, 10V
- Terminal Pozisyonu
- DUAL
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- REACH Uyumluluk Kodu
- not_compliant
- Max Junction Temperature Tj
- 150°C
- Montaj Tipi
- Surface Mount
- Fabrika Tedarik Süresi
- 20 Weeks
- Vgs Max
- ±20V
- Drain To Source Breakdown Voltage
- 30V
- Turn On Delay Time
- 6.9 ns
- Element Configuration
- Single
- Fet Type
- N-Channel
- Rise Time
- 3.6ns
- Operating Mode
- ENHANCEMENT MODE
- Yükseklik
- 900μm
- Parça Durumu
- Active
- Current Continuous Drain Id25
- 8A Ta
- Terminal Formu
- FLAT
- Transistor Element Material
- SILICON
- Kılıf / Paket
- 8-PowerVDFN
- Power Dissipation
- 2W
- Drain Currentmax Abs Id
- 8A
- Ambalaj
- Tape & Reel (TR)
- Turn Off Delay Time
- 17.3 ns
- ECCN Kodu
- EAR99
- Number Of Channels
- 1
- Pin Sayısı
- 8
- RoHS Durumu
- ROHS3 Compliant
- Montaj
- Surface Mount
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Gate Charge Qg Max Vgs
- 5.8nC @ 10V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Yayın Yılı
- 2013
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