RJ1U330AAFRGTL

Specifications

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance Ciss Max Vds

4500pF @ 25V

Power Dissipation Max

211W Tc

Gate Charge Qg Max Vgs

80nC @ 10V

Max Junction Temperature Tj

150°C

Fet Type

N-Channel

Gate To Source Voltage Vgs

30V

Terminal Formu

GULL WING

Manufacturer Package Identifier

LPT(S)

Avalanche Energy Rating Eas

74.8 mJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Operating Mode

ENHANCEMENT MODE

Yükseklik

5mm

Çalışma Sıcaklığı

150°C TJ

Montaj Tipi

Surface Mount

Continuous Drain Current Id

33A

Transistor Element Material

SILICON

Rds On Max Id Vgs

105m Ω @ 16.5A, 10V

Terminal Pozisyonu

SINGLE

Ambalaj

Cut Tape (CT)

Seri

Automotive, AEC-Q101

Current Continuous Drain Id25

33A Ta

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

1

Number Of Channels

1

Turn Off Delay Time

120 ns

RoHS Durumu

ROHS3 Compliant

Yüzey Montaj

YES

Parça Durumu

Active

Vgs Max

±30V

Case Connection

DRAIN

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

16 Weeks

Power Dissipation

211W

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

5V @ 1mA

Terminal Sayısı

2

Drain To Source Breakdown Voltage

250V