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RF4E110BNTR

ROHM Semiconductor

RF4E110BNTR

Single MOSFETs Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.22
  • 10+ pcs$0.21
  • 100+ pcs$0.20
  • 500+ pcs$0.19

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Same-day dispatch from stock

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RoHS

Compliant

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Specifications

Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Montaj
Surface Mount
Operating Mode
ENHANCEMENT MODE
Turn Off Delay Time
43 ns
Vgsth Max Id
2V @ 250μA
Fet Type
N-Channel
Terminal Pozisyonu
DUAL
Transistor Element Material
SILICON
REACH Uyumluluk Kodu
not_compliant
Gate To Source Voltage Vgs
20V
Drain To Source Voltage Vdss
30V
Pin Sayısı
8
Number Of Channels
1
Ambalaj
Tape & Reel (TR)
Fall Time Typ
11 ns
Çalışma Sıcaklığı
150°C TJ
Ds Breakdown Voltagemin
30V
RoHS Durumu
ROHS3 Compliant
Montaj Tipi
Surface Mount
Rise Time
12ns
Kurşunsuz
Lead Free
Parça Durumu
Active
Terminal Sayısı
6
ECCN Kodu
EAR99
Terminal Formu
NO LEAD
Gate Charge Qg Max Vgs
24nC @ 10V
Kılıf / Paket
8-PowerUDFN
Power Dissipation Max
2W Ta
Number Of Elements
1
Element Configuration
Single
Vgs Max
±20V
Turn On Delay Time
14 ns
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Jesd30 Code
S-PDSO-N6
Case Connection
DRAIN
Current Continuous Drain Id25
11A Ta
Fabrika Tedarik Süresi
20 Weeks
Input Capacitance Ciss Max Vds
1200pF @ 15V
Pulsed Drain Currentmax Idm
44A
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED

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