RF4C100BCTCR

Specifications

Transistor Element Material

SILICON

Terminal Pozisyonu

DUAL

REACH Uyumluluk Kodu

not_compliant

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgsth Max Id

1.2V @ 1mA

Fet Type

P-Channel

Çalışma Sıcaklığı

150°C TJ

Drainsource On Resistancemax

0.02Ohm

Drain Currentmax Abs Id

10A

Ds Breakdown Voltagemin

20V

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

15.2 mJ

Drain To Source Voltage Vdss

20V

Ambalaj

Cut Tape (CT)

Kılıf / Paket

8-PowerUDFN

Vgs Max

±8V

Number Of Elements

1

Power Dissipation Max

2W Ta

Terminal Sayısı

6

Parça Durumu

Active

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

23.5nC @ 4.5V

Terminal Formu

NO LEAD

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

1660pF @ 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

36A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Rds On Max Id Vgs

15.6m Ω @ 10A, 4.5V

Jesd30 Code

S-PDSO-N6

Drive Voltage Max Rds On Min Rds On

1.8V 4.5V

Current Continuous Drain Id25

10A Ta

Case Connection

DRAIN

Yüzey Montaj

YES

Fabrika Tedarik Süresi

16 Weeks