RE1C002ZPTL

Specifications

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fet Type

P-Channel

Yüzey Montaj

YES

RoHS Durumu

ROHS3 Compliant

Drain Currentmax Abs Id

0.2A

Ambalaj

Cut Tape (CT)

Transistor Element Material

SILICON

Gate Charge Qg Max Vgs

1.4nC @ 4.5V

Kılıf / Paket

SC-89, SOT-490

Vgsth Max Id

1V @ 100μA

Fabrika Tedarik Süresi

10 Weeks

Drive Voltage Max Rds On Min Rds On

4.5V

Rds On Max Id Vgs

1.2 Ω @ 200mA, 4.5V

Terminal Pozisyonu

DUAL

Yayın Yılı

2012

Transistor Application

SWITCHING

REACH Uyumluluk Kodu

not_compliant

Vgs Max

±10V

Drain To Source Voltage Vdss

20V

Terminal Formu

FLAT

Terminal Sayısı

3

Jesd30 Code

R-PDSO-F3

Input Capacitance Ciss Max Vds

115pF @ 10V

Current Continuous Drain Id25

200mA Ta

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Not For New Designs

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Dissipation Max

150mW Ta

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-40°C~150°C TJ

Ds Breakdown Voltagemin

20V