RE1C002UNTCL

Specifications

Transistor Element Material

SILICON

Ambalaj

Cut Tape (CT)

Fabrika Tedarik Süresi

16 Weeks

Kurşunsuz

Lead Free

Vgsth Max Id

1V @ 1mA

Kılıf / Paket

SC-89, SOT-490

Drive Voltage Max Rds On Min Rds On

1.2V 2.5V

Power Dissipation

150mW

Rds On Max Id Vgs

1.2 Ω @ 100mA, 2.5V

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Max Junction Temperature Tj

150°C

Yükseklik

850μm

Fet Type

N-Channel

Drain Currentmax Abs Id

0.2A

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

8V

Drain To Source Breakdown Voltage

20V

Power Dissipation Max

150mW Ta

Number Of Channels

1

Continuous Drain Current Id

200mA

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

150°C TJ

Vgs Max

±8V

Transistor Application

SWITCHING

Yayın Yılı

2016

Terminal Pozisyonu

DUAL

Terminal Sayısı

3

Terminal Formu

FLAT

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

200mA Ta

Number Of Elements

1

Input Capacitance Ciss Max Vds

25pF @ 10V

Jesd30 Code

R-PDSO-F3

Turn Off Delay Time

15 ns

Turn On Delay Time

5 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED