RD3P050SNTL1

Specifications

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

530pF @ 25V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

15W Tc

Number Of Elements

1

Drain Currentmax Abs Id

5A

Terminal Pozisyonu

SINGLE

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

20A

RoHS Durumu

ROHS3 Compliant

Terminal Formu

GULL WING

Vgsth Max Id

2.5V @ 1mA

Drain To Source Voltage Vdss

100V

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.205Ohm

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

150°C TJ

Fabrika Tedarik Süresi

16 Weeks

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgs Max

±20V

Yüzey Montaj

YES

Terminal Sayısı

2

Ds Breakdown Voltagemin

100V

Jesd30 Code

R-PSSO-G2

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

4V 10V

Rds On Max Id Vgs

190m Ω @ 5A, 10V

Gate Charge Qg Max Vgs

14nC @ 10V

Current Continuous Drain Id25

5A Ta