R8010ANX

Specifications

Çalışma Sıcaklığı

150°C TJ

Pulsed Drain Currentmax Idm

40A

Continuous Drain Current Id

10A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

SINGLE

Transistor Application

SWITCHING

Parça Durumu

Not For New Designs

Vgsth Max Id

5V @ 1mA

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgs Max

±30V

Jesd30 Code

R-PSFM-T3

Power Dissipation Max

40W Tc

Jedec95 Code

TO-220AB

Montaj Tipi

Through Hole

Yayın Yılı

2013

Gate Charge Qg Max Vgs

62nC @ 10V

Number Of Elements

1

Fet Type

N-Channel

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Continuous Drain Id25

10A Tc

Rds On Max Id Vgs

560m Ω @ 5A, 10V

Input Capacitance Ciss Max Vds

1750pF @ 25V

Case Connection

ISOLATED

Kurşunsuz

Lead Free

Terminal Sayısı

3

Avalanche Energy Rating Eas

6.63 mJ

Montaj

Through Hole

Drain To Source Voltage Vdss

800V

Drainsource On Resistancemax

0.56Ohm

REACH Uyumluluk Kodu

not_compliant

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

10 Weeks

Ambalaj

Bulk

Kılıf / Paket

TO-220-3 Full Pack

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

800V

Drive Voltage Max Rds On Min Rds On

10V