R8008ANX

Specifications

Number Of Elements

1

Gate Charge Qg Max Vgs

39nC @ 10V

Power Dissipation

50W

Fet Type

N-Channel

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Continuous Drain Id25

8A Ta

Rds On Max Id Vgs

1.03 Ω @ 4A, 10V

Element Configuration

Single

Vgs Max

±30V

Jesd30 Code

R-PSFM-T3

Power Dissipation Max

50W Tc

Jedec95 Code

TO-220AB

Montaj Tipi

Through Hole

Yayın Yılı

2011

Transistor Application

SWITCHING

Parça Durumu

Not For New Designs

Vgsth Max Id

5V @ 1mA

Pulsed Drain Currentmax Idm

32A

Çalışma Sıcaklığı

150°C TJ

Continuous Drain Current Id

8A

Drain Currentmax Abs Id

8A

Turn Off Delay Time

85 ns

Ambalaj

Bulk

Kılıf / Paket

TO-220-3 Full Pack

Drain To Source Breakdown Voltage

800V

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

30V

Turn On Delay Time

32 ns

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

10 Weeks

Montaj

Through Hole

Fall Time Typ

30 ns

Avalanche Energy Rating Eas

4.2 mJ

RoHS Durumu

ROHS3 Compliant

Rise Time

50ns

Case Connection

ISOLATED

Input Capacitance Ciss Max Vds

1080pF @ 25V

Radyasyon Dayanımı

No

Kurşunsuz

Lead Free