R8005ANX

Specifications

Fabrika Tedarik Süresi

10 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Drive Voltage Max Rds On Min Rds On

10V

Ds Breakdown Voltagemin

800V

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-220-3 Full Pack

Ambalaj

Bulk

Terminal Sayısı

3

Kurşunsuz

Lead Free

Input Capacitance Ciss Max Vds

485pF @ 25V

Case Connection

ISOLATED

RoHS Durumu

ROHS3 Compliant

REACH Uyumluluk Kodu

not_compliant

Drain To Source Voltage Vdss

800V

Avalanche Energy Rating Eas

1.66 mJ

Montaj

Through Hole

Jedec95 Code

TO-220AB

Montaj Tipi

Through Hole

Yayın Yılı

2013

Power Dissipation Max

40W Tc

Jesd30 Code

R-PSFM-T3

Vgs Max

±30V

Current Continuous Drain Id25

5A Tc

Rds On Max Id Vgs

2.08 Ω @ 2.5A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Type

N-Channel

Number Of Elements

1

Gate Charge Qg Max Vgs

21nC @ 10V

Drain Currentmax Abs Id

5A

Continuous Drain Current Id

5A

Çalışma Sıcaklığı

150°C TJ

Pulsed Drain Currentmax Idm

20A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgsth Max Id

5V @ 1mA

Parça Durumu

Not For New Designs

Transistor Application

SWITCHING

Terminal Pozisyonu

SINGLE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED