R8002ANX

Specifications

Number Of Elements

1

Gate Charge Qg Max Vgs

12.7nC @ 10V

Power Dissipation

35W

Current Continuous Drain Id25

2A Tc

Element Configuration

Single

Rds On Max Id Vgs

4.3 Ω @ 1A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Type

N-Channel

Vgs Max

±30V

Jesd30 Code

R-PSFM-T3

Power Dissipation Max

35W Tc

Jedec95 Code

TO-220AB

Montaj Tipi

Through Hole

Yayın Yılı

2012

Parça Durumu

Not For New Designs

Transistor Application

SWITCHING

Vgsth Max Id

5V @ 1mA

Çalışma Sıcaklığı

150°C TJ

Pulsed Drain Currentmax Idm

8A

Continuous Drain Current Id

2A

Drain Currentmax Abs Id

2A

Kılıf / Paket

TO-220-3 Full Pack

Drain To Source Breakdown Voltage

800V

Ambalaj

Bulk

Turn Off Delay Time

33 ns

Gate To Source Voltage Vgs

30V

Drive Voltage Max Rds On Min Rds On

10V

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

17 ns

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

10 Weeks

Avalanche Energy Rating Eas

0.265 mJ

Montaj

Through Hole

Fall Time Typ

70 ns

RoHS Durumu

ROHS3 Compliant

Rise Time

20ns

Input Capacitance Ciss Max Vds

210pF @ 25V

Case Connection

ISOLATED

Kurşunsuz

Lead Free

Radyasyon Dayanımı

No