R6076ENZ1C9

Specifications

Rds On Max Id Vgs

42m Ω @ 44.4A, 10V

Threshold Voltage

4V

Ambalaj

Tube

Yayın Yılı

2014

Montaj Tipi

Through Hole

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Reach Svhc

No SVHC

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.042Ohm

Avalanche Energy Rating Eas

1954 mJ

Montaj

Through Hole

Continuous Drain Current Id

76A

Configuration

SINGLE WITH BUILT-IN DIODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

3

Vgsth Max Id

4V @ 1mA

Pulsed Drain Currentmax Idm

228A

Kılıf / Paket

TO-247-3

Fet Type

N-Channel

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

600V

Transistor Element Material

SILICON

Terminal Sayısı

3

Vgs Max

±20V

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

150°C TJ

Input Capacitance Ciss Max Vds

6500pF @ 25V

Terminal Pozisyonu

SINGLE

Ds Breakdown Voltagemin

600V

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation Max

120W Tc

Parça Durumu

Last Time Buy

Current Continuous Drain Id25

76A Tc

Number Of Elements

1

Gate Charge Qg Max Vgs

260nC @ 10V

Fabrika Tedarik Süresi

10 Weeks