R6024KNZ1C9

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Pin Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

497 mJ

Continuous Drain Current Id

24A

Ambalaj

Tube

Yayın Yılı

2015

Montaj Tipi

Through Hole

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Reach Svhc

No SVHC

Drainsource On Resistancemax

0.165Ohm

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Rds On Max Id Vgs

165m Ω @ 11.3A, 10V

Threshold Voltage

5V

Power Dissipation Max

245W Tc

Parça Durumu

Last Time Buy

Current Continuous Drain Id25

24A Tc

Number Of Elements

1

Gate Charge Qg Max Vgs

45nC @ 10V

Fabrika Tedarik Süresi

13 Weeks

Ds Breakdown Voltagemin

600V

Drive Voltage Max Rds On Min Rds On

10V

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

600V

Terminal Sayısı

3

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Vgs Max

±20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Pozisyonu

SINGLE

Input Capacitance Ciss Max Vds

2000pF @ 25V

Pulsed Drain Currentmax Idm

72A

Vgsth Max Id

5V @ 1mA

Yüzey Montaj

NO

Kılıf / Paket

TO-247-3

Fet Type

N-Channel