R6020ENXC7G

Specifications

Rise Time

53 ns

Gate Charge Qg Max Vgs

60 nC @ 10 V

Vgs Th Gatesource Threshold Voltage

4 V

Current Continuous Drain Id25

20A (Ta)

Power Dissipation Max

68W (Tc)

Drive Voltage Max Rds On Min Rds On

10V

Qg Gate Charge

60 nC

RoHS

Details

Input Capacitance Ciss Max Vds

1400 pF @ 25 V

Çalışma Sıcaklığı

150°C (TJ)

Typical Turnon Delay Time

35 ns

Vgs Max

±20V

Drain To Source Voltage Vdss

600 V

Fet Type

N-Channel

Kılıf / Paket

TO-220-3 Full Pack

Vds Drainsource Breakdown Voltage

600 V

Vgsth Max Id

4V @ 1mA

Rds On Drainsource Resistance

196 mOhms

Channel Type

N Channel

Montaj Stili

Through Hole

Paket

Tube

Configuration

Single

Maks. Çalışma Sıcaklığı

+ 155 C

Number Of Channels

1 Channel

Forward Transconductance Min

5 S

Continuous Drain Current Id

20A

Pd Power Dissipation

68 W

Fabrika Paket Adedi

1000

Transistor Type

Power MOSFET

Typical Turnoff Delay Time

150 ns

Power Dissipation

68W

Ürün Tipi

MOSFET

Tedarikçi Cihaz Paketi

TO-220FM

Id Continuous Drain Current

20 A

Vgs Gatesource Voltage

- 20 V, + 20 V, - 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Montaj Tipi

Through Hole

Ambalaj

Tube

Transistor Polarity

N-Channel

Channel Mode

Enhancement