R6020ENX

Specifications

Pulsed Drain Currentmax Idm

80A

Vgsth Max Id

4V @ 1mA

Fet Type

N-Channel

Kılıf / Paket

TO-220-3 Full Pack

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.3mm

Vgs Max

±20V

Transistor Element Material

SILICON

Terminal Sayısı

3

Drain To Source Voltage Vdss

600V

Transistor Application

SWITCHING

Yükseklik

15.4mm

Input Capacitance Ciss Max Vds

1400pF @ 25V

Kurşunsuz

Lead Free

Gate To Source Voltage Vgs

20V

Genişlik

4.8mm

Çalışma Sıcaklığı

150°C TJ

REACH Uyumluluk Kodu

not_compliant

Drive Voltage Max Rds On Min Rds On

10V

Element Configuration

Single

Ds Breakdown Voltagemin

600V

Parça Durumu

Active

Turn On Delay Time

35 ns

Power Dissipation Max

50W Tc

Gate Charge Qg Max Vgs

60nC @ 10V

Fabrika Tedarik Süresi

18 Weeks

Number Of Elements

1

Current Continuous Drain Id25

20A Tc

Threshold Voltage

4V

Rds On Max Id Vgs

196m Ω @ 10A, 10V

Jedec95 Code

TO-220AB

Montaj Tipi

Through Hole

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2014

Ambalaj

Bulk

RoHS Durumu

ROHS3 Compliant

Reach Svhc

No SVHC

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Turn Off Delay Time

150 ns

Case Connection

ISOLATED