R6020ANZC8

Specifications

Pulsed Drain Currentmax Idm

80A

Vgsth Max Id

4.15V @ 1mA

Kılıf / Paket

TO-3P-3 Full Pack

Fet Type

N-Channel

Terminal Sayısı

3

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Vgs Max

±30V

Drain To Source Voltage Vdss

600V

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

2040pF @ 25V

Terminal Pozisyonu

SINGLE

Çalışma Sıcaklığı

150°C TJ

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

10V

Ds Breakdown Voltagemin

600V

Power Dissipation Max

120W Tc

Parça Durumu

Last Time Buy

Jesd30 Code

R-PSFM-T3

Gate Charge Qg Max Vgs

65nC @ 10V

Current Continuous Drain Id25

20A Ta

Number Of Elements

1

Rds On Max Id Vgs

220m Ω @ 10A, 10V

Yayın Yılı

2011

Montaj Tipi

Through Hole

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tube

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.22Ohm

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

26.7 mJ

Case Connection

ISOLATED

Montaj

Through Hole

Continuous Drain Current Id

20A

Configuration

SINGLE WITH BUILT-IN DIODE

Nem Hassasiyeti (MSL)

1 (Unlimited)