R6015ENX

Specifications

Pin Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Configuration

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current Id

15A

Montaj

Through Hole

Avalanche Energy Rating Eas

284 mJ

Case Connection

ISOLATED

Drainsource On Resistancemax

0.29Ohm

RoHS Durumu

ROHS3 Compliant

Reach Svhc

No SVHC

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj Tipi

Through Hole

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2014

Ambalaj

Bulk

Jedec95 Code

TO-220AB

Threshold Voltage

4V

Rds On Max Id Vgs

290m Ω @ 6.5A, 10V

Gate Charge Qg Max Vgs

40nC @ 10V

Fabrika Tedarik Süresi

18 Weeks

Number Of Elements

1

Current Continuous Drain Id25

15A Tc

Parça Durumu

Active

Power Dissipation Max

40W Tc

Drive Voltage Max Rds On Min Rds On

10V

Ds Breakdown Voltagemin

600V

REACH Uyumluluk Kodu

not_compliant

Input Capacitance Ciss Max Vds

910pF @ 25V

Terminal Pozisyonu

SINGLE

Kurşunsuz

Lead Free

Çalışma Sıcaklığı

150°C TJ

Operating Mode

ENHANCEMENT MODE

Vgs Max

±20V

Terminal Sayısı

3

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

600V

Fet Type

N-Channel

Kılıf / Paket

TO-220-3 Full Pack

Vgsth Max Id

4V @ 1mA