R6009KNX

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Pin Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Case Connection

ISOLATED

Continuous Drain Current Id

9A

Montaj Tipi

Through Hole

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2015

Drain Currentmax Abs Id

9A

Ambalaj

Bulk

RoHS Durumu

ROHS3 Compliant

Reach Svhc

No SVHC

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Threshold Voltage

5V

Rds On Max Id Vgs

535m Ω @ 2.8A, 10V

ECCN Kodu

EAR99

Jedec95 Code

TO-220AB

Parça Durumu

Active

Power Dissipation Max

48W Tc

Gate Charge Qg Max Vgs

16.5nC @ 10V

Fabrika Tedarik Süresi

18 Weeks

Number Of Elements

1

Current Continuous Drain Id25

9A Tc

REACH Uyumluluk Kodu

not_compliant

Drive Voltage Max Rds On Min Rds On

10V

Ds Breakdown Voltagemin

600V

Operating Mode

ENHANCEMENT MODE

Vgs Max

±20V

Terminal Sayısı

3

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

600V

Transistor Application

SWITCHING

Terminal Pozisyonu

SINGLE

Input Capacitance Ciss Max Vds

540pF @ 25V

Çalışma Sıcaklığı

-55°C~150°C TJ

Pulsed Drain Currentmax Idm

27A

Vgsth Max Id

5V @ 1mA

Fet Type

N-Channel

Kılıf / Paket

TO-220-3 Full Pack

Yüzey Montaj

NO