QS6U22TR

Specifications

Fall Time Typ

12 ns

Yayın Yılı

2006

Continuous Drain Current Id

1.5A

Kurşunsuz Kodu

yes

Tepe Reflow Sıcaklığı (°C)

260

Rds On Max Id Vgs

215m Ω @ 1.5A, 4.5V

Akım Değeri

-1.5A

Turn Off Delay Time

45 ns

Vgs Max

±12V

Fet Type

P-Channel

Terminal Sayısı

6

Transistor Element Material

SILICON

Threshold Voltage

-2V

Input Capacitance Ciss Max Vds

270pF @ 10V

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Fabrika Tedarik Süresi

20 Weeks

Terminal Formu

GULL WING

Çalışma Sıcaklığı

150°C TJ

JESD-609 Kodu

e1

Gate To Source Voltage Vgs

12V

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Kılıf / Paket

SOT-23-6 Thin, TSOT-23-6

Turn On Delay Time

10 ns

Gate Charge Qg Max Vgs

3nC @ 4.5V

Drainsource On Resistancemax

0.235Ohm

Drain To Source Voltage Vdss

20V

Operating Mode

ENHANCEMENT MODE

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Pin Sayısı

6

Parça Durumu

Active

Power Dissipation Max

1.25W Ta

Voltage Rated Dc

-20V

Fet Feature

Schottky Diode (Isolated)

Radyasyon Dayanımı

No

Rise Time

12ns