QS5U36TR

Specifications

Drainsource On Resistancemax

0.104Ohm

Rds On Max Id Vgs

81m Ω @ 2.5A, 4.5V

Turn Off Delay Time

30 ns

Element Configuration

Single

Vgs Max

±10V

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

1.5V 4.5V

Continuous Drain Current Id

2.5A

Yayın Yılı

2008

Gate To Source Voltage Vgs

10V

Fall Time Typ

15 ns

Gate Charge Qg Max Vgs

3.5nC @ 4.5V

Kılıf / Paket

SOT-23-5 Thin, TSOT-23-5

Turn On Delay Time

6 ns

Montaj

Surface Mount

Vgsth Max Id

1.3V @ 1mA

Terminal Formu

GULL WING

Number Of Elements

1

Fabrika Tedarik Süresi

20 Weeks

Pin Sayısı

5

Current Continuous Drain Id25

2.5A Ta

Montaj Tipi

Surface Mount

Drain To Source Breakdown Voltage

20V

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

DUAL

Power Dissipation

900mW

Çalışma Sıcaklığı

150°C TJ

Input Capacitance Ciss Max Vds

280pF @ 10V

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Terminal Sayısı

5

Parça Durumu

Active

Transistor Element Material

SILICON

Power Dissipation Max

1.25W Ta

ECCN Kodu

EAR99

Rise Time

15ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Feature

Schottky Diode (Isolated)

Transistor Application

SWITCHING