QS5U27TR

Specifications

Rise Time

10ns

Fet Feature

Schottky Diode (Isolated)

Voltage Rated Dc

-20V

Radyasyon Dayanımı

No

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Pin Sayısı

5

Power Dissipation Max

1.25W Ta

Drain To Source Breakdown Voltage

-20V

Terminal

SMD/SMT

Terminal Pozisyonu

DUAL

Ambalaj

Tape & Reel (TR)

Power Dissipation

1.25W

Montaj

Surface Mount

Vgsth Max Id

2V @ 1mA

Tepe Reflow Süresi (maks. sn)

10

Pin Sayısı

5

Current Continuous Drain Id25

1.5A Ta

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

4.2nC @ 4.5V

Kılıf / Paket

SOT-23-5 Thin, TSOT-23-5

Turn On Delay Time

10 ns

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Gate To Source Voltage Vgs

12V

Element Configuration

Single

Reach Svhc

No SVHC

Drain To Source Voltage Vdss

20V

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.24Ohm

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Nominal Vgs

-2 V

Input Capacitance Ciss Max Vds

325pF @ 10V

Terminal Sayısı

5

Transistor Element Material

SILICON

JESD-609 Kodu

e1

Çalışma Sıcaklığı

150°C TJ

Terminal Formu

GULL WING