Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Collector Emitter Voltage Vceo
- 30V
- Transistor Element Material
- SILICON
- Operating Temperature Max
- 150°C
- Collector Base Voltage Vcbo
- 30V
- Dc Current Gain Hfe Min Ic Vce
- 20000 @ 100mA 5V
- Current Collector Cutoff Max
- 100nA ICBO
- Parça Durumu
- Not For New Designs
- Element Configuration
- Single
- Yayın Yılı
- 1998
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Emitter Base Voltage Vebo
- 10V
- Polarity
- PNP
- ECCN Kodu
- EAR99
- RoHS Durumu
- ROHS3 Compliant
- Power Dissipation
- 200mW
- Transistor Type
- PNP - Darlington
- Hfemin
- 10000
- Fabrika Tedarik Süresi
- 7 Weeks
- Transition Frequency
- 125MHz
- Max Collector Current
- 300mA
- Gain Bandwidth Product
- 125MHz
- Pin Sayısı
- 3
- Collectorbase Capacitancemax
- 7pF
- Collectoremitter Breakdown Voltage
- 30V
- Number Of Elements
- 1
- HTS Kodu
- 8541.21.00.75
- Montaj Tipi
- Surface Mount
- Terminal Formu
- GULL WING
- Montaj
- Surface Mount
- Kurşunsuz
- Lead Free
- Ambalaj
- Tape & Reel (TR)
- Transistor Application
- AMPLIFIER
- Max Power Dissipation
- 200mW
- Radyasyon Dayanımı
- No
- Terminal Pozisyonu
- DUAL
- Collectoremitter Saturation Voltage
- 1.5V
- Continuous Collector Current
- 500mA
- Currentcollector Ic Max
- 300mA
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Terminal Sayısı
- 3
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