Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Collector Emitter Voltage Vceo
- 50V
- Transistor Element Material
- SILICON
- Dc Current Gain Hfe Min Ic Vce
- 250 @ 1mA 5V
- Vce Saturation Max Ib Ic
- 600mV @ 5mA, 100mA
- Collector Base Voltage Vcbo
- 60V
- Element Configuration
- Single
- Current Collector Cutoff Max
- 100nA ICBO
- Parça Durumu
- Not For New Designs
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2006
- Emitter Base Voltage Vebo
- 6V
- Çalışma Sıcaklığı
- 125°C TJ
- Transistor Type
- NPN
- Hfemin
- 250
- ECCN Kodu
- EAR99
- RoHS Durumu
- ROHS3 Compliant
- Fabrika Tedarik Süresi
- 9 Weeks
- Transition Frequency
- 100MHz
- Max Collector Current
- 200mA
- Pin Sayısı
- 59
- Gain Bandwidth Product
- 700MHz
- Collectorbase Capacitancemax
- 3pF
- Number Of Elements
- 1
- HTS Kodu
- 8541.21.00.95
- Collectoremitter Breakdown Voltage
- 50V
- Kurşunsuz
- Lead Free
- Ambalaj
- Tape & Reel (TR)
- Montaj Tipi
- Surface Mount
- Terminal Formu
- GULL WING
- Max Frequency
- 700MHz
- Montaj
- Surface Mount
- Polaritychannel Type
- NPN
- Jesd30 Code
- R-PDSO-G3
- Transistor Application
- SWITCHING
- Terminal Pozisyonu
- DUAL
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 200mW
- Currentcollector Ic Max
- 200mA
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Terminal Sayısı
- 3
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