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Specifications
- Frequency Transition
- 200MHz
- Fabrika Tedarik Süresi
- 13 Weeks
- Current Collector Cutoff Max
- 500nA
- Transition Frequency
- 200MHz
- Tepe Reflow Süresi (maks. sn)
- 10
- Parça Durumu
- Active
- Jesd30 Code
- R-PDSO-G3
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Pin Sayısı
- 3
- Additional Feature
- BUILT IN BIAS RESISTOR RATIO IS 1
- Terminal Formu
- GULL WING
- Resistor Base R1
- 4.7 k Ω
- Number Of Elements
- 1
- Operating Temperature Max
- 150°C
- Collector Emitter Voltage Vceo
- 300mV
- Polaritychannel Type
- NPN
- Qualification Status
- Not Qualified
- HTS Kodu
- 8541.21.00.75
- Collectoremitter Breakdown Voltage
- 50V
- JESD-609 Kodu
- e1
- Vcesatmax
- 0.3 V
- Transistor Type
- NPN - Pre-Biased
- Max Collector Current
- 500mA
- Configuration
- SINGLE WITH BUILT-IN RESISTOR
- Dc Current Gain Hfe Min Ic Vce
- 47 @ 50mA 5V
- Terminal Pozisyonu
- DUAL
- Terminal Kaplaması
- Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
- Kurşunsuz Kodu
- yes
- Transistor Application
- SWITCHING
- Max Power Dissipation
- 200mW
- Montaj
- Surface Mount
- Terminal Sayısı
- 3
- Tepe Reflow Sıcaklığı (°C)
- 260
- Power Max
- 200mW
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Max Breakdown Voltage
- 50V
- ECCN Kodu
- EAR99
- Vce Saturation Max Ib Ic
- 300mV @ 2.5mA, 50mA
- Ambalaj
- Tape & Reel (TR)
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