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DTD123YCT116

ROHM Semiconductor

DTD123YCT116

Pre-Biased BJT Transistors

In StockRoHS: Compliant

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Specifications

Montaj Tipi
Surface Mount
RoHS Durumu
ROHS3 Compliant
ECCN Kodu
EAR99
Max Breakdown Voltage
50V
Resistor Emitter Base R2
10 k Ω
Ambalaj
Tape & Reel (TR)
Vce Saturation Max Ib Ic
300mV @ 2.5mA, 50mA
Terminal Sayısı
3
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Montaj
Surface Mount
Nem Hassasiyeti (MSL)
1 (Unlimited)
Yayın Yılı
2004
Power Max
200mW
Transistor Element Material
SILICON
Transistor Type
NPN - Pre-Biased
Vcesatmax
0.3 V
Transistor Application
SWITCHING
Terminal Pozisyonu
DUAL
Max Power Dissipation
200mW
Configuration
SINGLE WITH BUILT-IN RESISTOR
Max Collector Current
500mA
Dc Current Gain Hfe Min Ic Vce
56 @ 50mA 5V
HTS Kodu
8541.21.00.75
Collectoremitter Breakdown Voltage
50V
Qualification Status
Not Qualified
Resistor Base R1
2.2 k Ω
Terminal Formu
GULL WING
Collector Emitter Voltage Vceo
300mV
Polaritychannel Type
NPN
Operating Temperature Max
150°C
Number Of Elements
1
Pin Sayısı
3
Additional Feature
DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.5
Frequency Transition
200MHz
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
REACH Uyumluluk Kodu
not_compliant
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Transition Frequency
200MHz
Current Collector Cutoff Max
500nA
Fabrika Tedarik Süresi
13 Weeks

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