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DTD123TSTP

ROHM Semiconductor

DTD123TSTP

Pre-Biased BJT Transistors

In StockRoHS: Compliant

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Specifications

Parça Durumu
Obsolete
Jesd30 Code
R-PSIP-T3
Current Collector Cutoff Max
500nA ICBO
Transition Frequency
200MHz
Tepe Reflow Süresi (maks. sn)
10
Kılıf / Paket
SC-72 Formed Leads
Frequency Transition
200MHz
Additional Feature
DIGITAL
Number Of Elements
1
Operating Temperature Max
150°C
Collector Emitter Voltage Vceo
300mV
Polaritychannel Type
NPN
Resistor Base R1
2.2 k Ω
JESD-609 Kodu
e1
Qualification Status
Not Qualified
Collectoremitter Breakdown Voltage
40V
HTS Kodu
8541.21.00.75
Dc Current Gain Hfe Min Ic Vce
100 @ 50mA 5V
Max Collector Current
500mA
Configuration
SINGLE WITH BUILT-IN RESISTOR
Max Power Dissipation
300mW
Terminal Pozisyonu
SINGLE
Terminal Kaplaması
TIN SILVER COPPER
Transistor Application
SWITCHING
Vcesatmax
0.3 V
Transistor Type
NPN - Pre-Biased
Temel Parça No
DTD123
Transistor Element Material
SILICON
Power Max
300mW
Yayın Yılı
1998
Nem Hassasiyeti (MSL)
1 (Unlimited)
Montaj
Through Hole
Tepe Reflow Sıcaklığı (°C)
260
Terminal Sayısı
3
Ambalaj
Tape & Reel (TR)
Vce Saturation Max Ib Ic
300mV @ 2.5mA, 50mA
ECCN Kodu
EAR99
RoHS Durumu
ROHS3 Compliant
Montaj Tipi
Through Hole

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