DTD114GCHZGT116

Specifications

Package Type

SOT-23

Package Body Material

PLASTIC/EPOXY

Continuous Collector Current

100mA

Emittercollector Voltage Max

50(V)

Resistor Base R1

10 kOhms

Dc Collectorbase Gain Hfe Min

56 at 50 mA, 5 V

Üretici Parça No

DTD114GCHZGT116

Msl

MSL 1 - Unlimited

Ihs Manufacturer

ROHM CO LTD

Voltage Collector Emitter Breakdown Max

50 V

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

REACH Uyumluluk Kodu

compliant

Current Collector Cutoff Max

500nA (ICBO)

Jesd30 Code

R-PDSO-G3

Transition Frequencynom Ft

200 MHz

Additional Feature

BUILT IN BIAS RESISTOR

Transistor Polarity

Single NPN

Risk Rank

1.61

Pd Power Dissipation

200 mW

Ambalaj

Tape and Reel

Vce Saturation Max Ib Ic

300mV @ 2.5mA, 50mA

Montaj Stili

SMD/SMT

Part Aliases

DTD114GCHZG

Yüzey Montaj

YES

Terminal Pozisyonu

DUAL

Maks. Çalışma Sıcaklığı

+ 150 C

Collector Currentmax Ic

0.5 A

Dc Current Gain Hfe Min Ic Vce

56 @ 50mA, 5V

Rohs Code

Yes

Transistor Type

NPN - Pre-Biased

Power Max

200 mW

Power Dissipation

0.2(W)

Number Of Terminals

3

Polaritychannel Type

NPN

Number Of Elements

1

Tedarikçi Cihaz Paketi

SST3

Terminal Formu

GULL WING

Dc Current Gainmin Hfe

56

Emitter Base Voltage Vebo

5 V

Frequency Transition

200 MHz