Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Max
- 200mW
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Sayısı
- 3
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Configuration
- SINGLE WITH BUILT-IN RESISTOR
- Dc Current Gain Hfe Min Ic Vce
- 56 @ 5mA 5V
- Transistor Application
- SWITCHING
- Terminal Pozisyonu
- DUAL
- Vcesatmax
- 0.3 V
- Transistor Type
- NPN - Pre-Biased
- Currentcollector Ic Max
- 100mA
- RoHS Durumu
- ROHS3 Compliant
- Yüzey Montaj
- YES
- Montaj Tipi
- Surface Mount
- Vce Saturation Max Ib Ic
- 300mV @ 500μA, 10mA
- Ambalaj
- Tape & Reel (TR)
- Resistor Emitter Base R2
- 22 k Ω
- ECCN Kodu
- EAR99
- Additional Feature
- DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.47
- Pin Sayısı
- 3
- Fabrika Tedarik Süresi
- 13 Weeks
- Current Collector Cutoff Max
- 500nA
- Transition Frequency
- 250MHz
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Parça Durumu
- Active
- Jesd30 Code
- R-PDSO-G3
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Frequency Transition
- 250MHz
- Qualification Status
- Not Qualified
- HTS Kodu
- 8541.21.00.75
- Voltage Collector Emitter Breakdown Max
- 50V
- Number Of Elements
- 1
- Operating Temperature Max
- 150°C
- Polaritychannel Type
- NPN
- Terminal Formu
- GULL WING
- Resistor Base R1
- 47 k Ω
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