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Specifications
- Transistor Type
- NPN - Pre-Biased
- Kurşunsuz Kodu
- yes
- Terminal Pozisyonu
- DUAL
- Max Power Dissipation
- 200mW
- Max Collector Current
- 100mA
- Dc Current Gain Hfe Min Ic Vce
- 68 @ 5mA 5V
- Power Dissipation
- 200mW
- Terminal Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2009
- Uzunluk
- 2.9mm
- Vce Saturation Max Ib Ic
- 300mV @ 500μA, 10mA
- Ambalaj
- Tape & Reel (TR)
- Voltage Rated Dc
- 50V
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Hfemin
- 68
- Transition Frequency
- 250MHz
- Current Collector Cutoff Max
- 500nA
- Parça Durumu
- Active
- Additional Feature
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Continuous Collector Current
- 30mA
- Pin Sayısı
- 3
- Resistor Base R1
- 47 k Ω
- Yükseklik
- 1.1mm
- Akım Değeri
- 100mA
- Collectoremitter Breakdown Voltage
- 50V
- Maks. Çalışma Sıcaklığı
- 150°C
- Genişlik
- 1.6mm
- Radyasyon Dayanımı
- No
- Temel Parça No
- DTC144
- Element Configuration
- Single
- Transistor Application
- AMPLIFIER
- Tepe Reflow Sıcaklığı (°C)
- 260
- Max Output Current
- 100mA
- Montaj
- Surface Mount
- Operating Supply Voltage
- 50V
- ECCN Kodu
- EAR99
- Max Breakdown Voltage
- 50V
- Resistor Emitter Base R2
- 47 k Ω
- Montaj Tipi
- Surface Mount
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