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ROHM Semiconductor

DTC123JEFRATL

Single BJT Transistors

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Specifications

Terminal Formu
GULL WING
Risk Rank
1.76
ECCN Kodu
EAR99
Polaritychannel Type
NPN
Reference Standard
AEC-Q101
Package Body Material
PLASTIC/EPOXY
Moisture Sensitivity Levels
1
Ihs Manufacturer
ROHM CO LTD
Transistor Element Material
SILICON
Forward Voltage Vf
850mV
Forward Current If
1A
Üretici Parça No
DTC123JEFRATL
Reverse Peak Voltage Vrrm
100V
Jesd30 Code
R-PDSO-G3
Power Dissipation
150mW
Dc Current Gainmin Hfe
80
Yüzey Montaj
YES
Msl
MSL 1 - Unlimited
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Package Shape
RECTANGULAR
Çalışma Sıcaklığı
-55℃~150℃
Reverse Leakage Current Ir
20uA
Package Description
SC-75A, 3 PIN
REACH Uyumluluk Kodu
compliant
Forward Surge Current Ifsm
22A
Configuration
SINGLE WITH BUILT-IN RESISTOR
Package Style
SMALL OUTLINE
Part Life Cycle Code
Active
Transition Frequencynom Ft
250 MHz
Packageenclosure
SOD-323HE
Number Of Terminals
3
Power Dissipationmax Abs
0.15 W
Terminal Pozisyonu
DUAL
Voltage Rating
100V
Collectoremitter Voltagemax
50 V
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 21
Transistor Application
SWITCHING
Qualification
AEC-Q101
Continuous Collector Current
100mA
Reflow Temperaturemax S
NOT SPECIFIED

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