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Rohm Semiconductor

DTC123JCAHZGT116

Pre-Biased BJT Transistors

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Specifications

Resistor Base R1
2.2 kOhms
Fabrika Paket Adedi
3000
Reference Standard
AEC-Q101
Typical Input Resistor
2.2
ECCN Kodu
EAR99
Risk Rank
1.55
Terminal Formu
GULL WING
Current Collector Cutoff Max
500nA
Yüzey Montaj
YES
Msl
MSL 1 - Unlimited
Power Dissipation
0.35(W)
Seri
Automotive, AEC-Q101
Moisture Sensitivity Levels
1
Tedarikçi Cihaz Paketi
SST3
Currentcollector Ic Max
100 mA
Transistor Element Material
SILICON
Dc Current Gain
80
Package Style
SMALL OUTLINE
Dc Current Gain Hfe Min Ic Vce
80 @ 10mA, 5V
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Package Type
SOT-23
Transistor Polarity
Single NPN
Qualification
AEC-Q101
Reflow Temperaturemax S
NOT SPECIFIED
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 21
Voltage Collector Emitter Breakdown Max
50 V
Frequency Transition
250 MHz
Emittercollector Voltage Max
50(V)
Collector Current Dc
0.1(A)
Number Of Terminals
3
Resistor Emitter Base R2
47 kOhms
Typical Resistor Ratio
0.05
Montaj Stili
SMD/SMT
Transistor Type
NPN - Pre-Biased
Polaritychannel Type
NPN
Ürün Tipi
BJTs - Bipolar Transistors - Pre-Biased
Power Max
200 mW
Ürün Durumu
Active
Dc Current Gainmin Hfe
80
Maks. Çalışma Sıcaklığı
+ 150 C

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