DTC114TMFHAT2L

Specifications

Additional Feature

BUILT IN BIAS RESISTOR

Voltage Collector Emitter Breakdown Max

50 V

Frequency Transition

250 MHz

Emittercollector Voltage Max

50(V)

Number Of Terminals

3

Collector Current Dc

0.1(A)

Package Type

VMT

Transistor Polarity

Single NPN

Reflow Temperaturemax S

NOT SPECIFIED

Qualification

AEC-Q101

Package Description

SC-105AA, 3 PIN

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Dc Current Gain

100

Dc Current Gain Hfe Min Ic Vce

100 @ 1mA, 5V

Package Style

SMALL OUTLINE

Currentcollector Ic Max

100 mA

Tedarikçi Cihaz Paketi

VMT3

Moisture Sensitivity Levels

1

Transistor Element Material

SILICON

Yüzey Montaj

YES

Msl

MSL 1 - Unlimited

Power Dissipation

0.1(W)

Seri

Automotive, AEC-Q101

ECCN Kodu

EAR99

Dc Collectorbase Gain Hfe Min

100

Risk Rank

1.78

Terminal Formu

FLAT

Current Collector Cutoff Max

500nA (ICBO)

Collector Emitter Voltage Vceo Max

50 V

Fabrika Paket Adedi

8000

Resistor Base R1

10 kOhms

Reference Standard

AEC-Q101

Typical Input Resistor

10

Power Dissipationmax Abs

0.15 W

Terminal Pozisyonu

DUAL

Collectoremitter Voltagemax

50 V

Pd Power Dissipation

150 mW

Rohs Code

Yes

Number Of Elements

1

Transistor Application

SWITCHING