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Specifications
- Resistor Emitter Base R2
- 47 k Ω
- Voltage Rated Dc
- -50V
- Collector Emitter Voltage Vceo
- 300mV
- Transition Frequency
- 250MHz
- Max Breakdown Voltage
- 50V
- Terminal
- SMD/SMT
- Hfemin
- 80
- Current Collector Cutoff Max
- 500nA
- Pin Sayısı
- 3
- Terminal Pozisyonu
- DUAL
- Ambalaj
- Tape & Reel (TR)
- Number Of Elements
- 1
- Maks. Çalışma Sıcaklığı
- 150°C
- Tepe Reflow Sıcaklığı (°C)
- 260
- Frequency Transition
- 250MHz
- JESD-609 Kodu
- e1
- Resistor Base R1
- 4.7 k Ω
- HTS Kodu
- 8541.21.00.75
- Tepe Reflow Süresi (maks. sn)
- 10
- Vce Saturation Max Ib Ic
- 300mV @ 250μA, 5mA
- Power Dissipation
- 150mW
- Transistor Application
- SWITCHING
- Min. Çalışma Sıcaklığı
- -55°C
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 3
- Additional Feature
- BUILT IN BIAS RESISTOR RATIO IS 10
- Pin Sayısı
- 3
- Kılıf / Paket
- SC-75, SOT-416
- Reach Svhc
- No SVHC
- Collectoremitter Breakdown Voltage
- 50V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Surface Mount
- Kurşunsuz Kodu
- yes
- Terminal Formu
- GULL WING
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 10mA 5V
- Max Power Dissipation
- 150mW
- Kurşunsuz
- Lead Free
- Max Collector Current
- 100mA
- Transistor Type
- PNP - Pre-Biased
- Element Configuration
- Single
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