Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Breakdown Voltage
- 50V
- Transistor Application
- SWITCHING
- Dc Current Gain Hfe Min Ic Vce
- 68 @ 5mA 5V
- Resistor Emitter Base R2
- 47 k Ω
- Max Power Dissipation
- 200mW
- Collector Emitter Voltage Vceo
- 300mV
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 7 Weeks
- Transition Frequency
- 250MHz
- Collectoremitter Breakdown Voltage
- 50V
- REACH Uyumluluk Kodu
- not_compliant
- Terminal Pozisyonu
- DUAL
- Vce Saturation Max Ib Ic
- 300mV @ 500μA, 10mA
- Configuration
- SINGLE WITH BUILT-IN RESISTOR
- Resistor Base R1
- 22 k Ω
- Power Max
- 200mW
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Yayın Yılı
- 2016
- ECCN Kodu
- EAR99
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Type
- PNP - Pre-Biased
- Vcesatmax
- 0.3 V
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Max Collector Current
- 100mA
- Terminal Formu
- GULL WING
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Qualification Status
- Not Qualified
- Parça Durumu
- Active
- Frequency Transition
- 250MHz
- Polaritychannel Type
- PNP
- Additional Feature
- DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 2.136
- Jesd30 Code
- R-PDSO-G3
- Current Collector Cutoff Max
- 500nA
- Operating Temperature Max
- 150°C
- Montaj
- Surface Mount
- HTS Kodu
- 8541.21.00.75
- Montaj Tipi
- Surface Mount
- Ambalaj
- Tape & Reel (TR)
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