Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Breakdown Voltage
- 50V
- Transistor Application
- SWITCHING
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 1mA 5V
- Maks. Çalışma Sıcaklığı
- 150°C
- Max Power Dissipation
- 200mW
- Collector Emitter Voltage Vceo
- 50V
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 10 Weeks
- Transition Frequency
- 250MHz
- Terminal Kaplaması
- TIN SILVER COPPER
- Hfemin
- 100
- Collectoremitter Breakdown Voltage
- 50V
- Pin Sayısı
- 59
- Element Configuration
- Single
- Terminal Pozisyonu
- DUAL
- Akım Değeri
- -100mA
- Vce Saturation Max Ib Ic
- 300mV @ 500μA, 5mA
- Resistor Base R1
- 22 k Ω
- JESD-609 Kodu
- e1
- Yayın Yılı
- 2006
- Tepe Reflow Süresi (maks. sn)
- 10
- Voltage Rated Dc
- -50V
- ECCN Kodu
- EAR99
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Type
- PNP - Pre-Biased
- Radyasyon Dayanımı
- No
- Vcesatmax
- 0.3 V
- RoHS Durumu
- ROHS3 Compliant
- Max Collector Current
- 100mA
- Terminal Formu
- GULL WING
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Min. Çalışma Sıcaklığı
- -55°C
- Parça Durumu
- Not For New Designs
- Polarity
- PNP
- Kurşunsuz
- Lead Free
- Kurşunsuz Kodu
- yes
- Frequency Transition
- 250MHz
- Additional Feature
- BUILT IN BIAS RESISTOR
- Jesd30 Code
- R-PDSO-G3
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