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ROHM Semiconductor

DTA124EEFRATL

Single BJT Transistors

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Specifications

Jesd30 Code
R-PDSO-G3
Collectoremitter Maximum Voltage Vceo
100V
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 1
Package Description
SC-75A, 3 PIN
Part Life Cycle Code
Active
Characteristic Frequency Ft
100MHz
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Collectoremitter Voltagemax
50 V
Transition Frequencynom Ft
250 MHz
Reflow Temperaturemax S
NOT SPECIFIED
Ihs Manufacturer
ROHM CO LTD
Transistor Element Material
SILICON
Risk Rank
5.79
Terminal Formu
GULL WING
Dc Current Gainmin Hfe
56
Reference Standard
AEC-Q101
Polaritychannel Type
PNP
Power Dissipation Pd
2.6W
Vcbo
120V
Fet Type
NPN
Rohs Code
Yes
Number Of Terminals
3
Configuration
SINGLE WITH BUILT-IN RESISTOR
Collectoremitter Saturation Voltage
500mV
Package Style
SMALL OUTLINE
Moisture Sensitivity Levels
1
Collector Continuous Current
1A
ECCN Kodu
EAR99
Çalışma Sıcaklığı
-55℃~150℃
Package Shape
RECTANGULAR
Packageenclosure
SOT-223
Package Body Material
PLASTIC/EPOXY
Transistor Application
SWITCHING
Number Of Elements
1
Yüzey Montaj
YES
Üretici Parça No
DTA124EEFRATL
REACH Uyumluluk Kodu
compliant
Terminal Pozisyonu
DUAL
Collector Currentmax Ic
0.1 A
Dc Current Gain Hfe
100

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