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Rohm Semiconductor

DTA114TMFHAT2L

Pre-Biased BJT Transistors

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Specifications

Montaj Tipi
Surface Mount
Ambalaj
Tape and Reel
Kılıf / Paket
SOT-723
Power Dissipation
0.15(W)
Transition Frequencynom Ft
250 MHz
Emitter Base Voltage Vebo
5 V
RoHS
Details
Pd Power Dissipation
150 mW
Ürün Durumu
Not For New Designs
Frequency Transition
250 MHz
Maximum Operating Frequency
250 MHz
Maks. Çalışma Sıcaklığı
+ 150 C
Seri
Automotive, AEC-Q101
Reference Standard
AEC-Q101
Polaritychannel Type
PNP
Risk Rank
1.77
Montaj Stili
SMD/SMT
Terminal Formu
FLAT
ECCN Kodu
EAR99
Package Shape
RECTANGULAR
Configuration
Single
Vce Saturation Max Ib Ic
300mV @ 1mA, 10mA
Typical Input Resistor
10
Power Max
150 mW
Üretici Parça No
DTA114TMFHAT2L
Transistor Polarity
Single PNP
Terminal Pozisyonu
DUAL
Collector Currentmax Ic
0.1 A
Package Body Material
PLASTIC/EPOXY
Dc Current Gain Hfe Min Ic Vce
100 @ 1mA, 5V
Continuous Collector Current
100mA
Transistor Application
SWITCHING
Number Of Elements
1
Emittercollector Voltage Max
50(V)
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Collectoremitter Voltagemax
50 V
Msl
MSL 1 - Unlimited
Ürün Tipi
BJTs - Bipolar Transistors - Pre-Biased
Collector Emitter Voltage Vceo Max
50 V
Package Type
VMT

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