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DTA114EEFRATL

ROHM Semiconductor

DTA114EEFRATL

Pre-Biased BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.31
  • 10+ pcs$0.29
  • 100+ pcs$0.27
  • 500+ pcs$0.26

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RoHS

Compliant

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Specifications

Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 1
Kılıf / Paket
SC-75, SOT-416
REACH Uyumluluk Kodu
not_compliant
Fabrika Tedarik Süresi
13 Weeks
Currentcollector Ic Max
20mA
Reach Svhc
Unknown
Collectoremitter Breakdown Voltage
50V
Max Power Dissipation
150mW
ECCN Kodu
EAR99
Number Of Elements
1
Seri
Automotive, AEC-Q101
Polarity
PNP
Current Collector Cutoff Max
500nA
Terminal Pozisyonu
DUAL
Temel Parça No
DTA114
Maks. Çalışma Sıcaklığı
150°C
Transistor Application
SWITCHING
Nem Hassasiyeti (MSL)
1 (Unlimited)
Terminal Sayısı
3
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Ambalaj
Tape & Reel (TR)
Montaj Tipi
Surface Mount
Hfemin
30
Montaj
Surface Mount
Yayın Yılı
2016
Max Collector Current
50mA
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Terminal Formu
GULL WING
Parça Durumu
Active
Transistor Element Material
SILICON
Collector Emitter Voltage Vceo
300mV
Pin Sayısı
3
RoHS Durumu
ROHS3 Compliant
Resistor Emitter Base R2
10 k Ω
Dc Current Gain Hfe Min Ic Vce
20 @ 5mA 5V
Transition Frequency
250MHz
Vce Saturation Max Ib Ic
300mV @ 500μA, 10mA
Transistor Type
PNP - Pre-Biased
Continuous Collector Current
-100mA
Power Dissipation
150mW

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