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Specifications
- Transistor Element Material
- SILICON
- Emittercollector Voltage Max
- 50(V)
- RoHS
- Details
- Msl
- MSL 1 - Unlimited
- Package Body Material
- PLASTIC/EPOXY
- Montaj Stili
- SMD/SMT
- Power Dissipation
- 0.15(W)
- Jesd30 Code
- R-PDSO-F3
- Maks. Çalışma Sıcaklığı
- + 150 C
- Maximum Operating Frequency
- 250 MHz
- Package Style
- SMALL OUTLINE
- Continuous Collector Current
- 100mA
- Dc Current Gainmin Hfe
- 35
- Ürün Tipi
- BJTs - Bipolar Transistors - Pre-Biased
- Typical Resistor Ratio
- 0.47
- Kılıf / Paket
- SOT-723
- Dc Current Gain
- 35
- Currentcollector Ic Max
- 100 mA
- ECCN Kodu
- EAR99
- Number Of Elements
- 1
- Package Type
- VMT
- Montaj Tipi
- Surface Mount
- Power Max
- 150 mW
- Part Aliases
- DTA043XM
- Package Shape
- RECTANGULAR
- Terminal Formu
- FLAT
- Risk Rank
- 1.66
- Tip
- PNP
- Transistor Application
- SWITCHING
- Collector Current Dc
- 0.1(A)
- Collectoremitter Voltagemax
- 50 V
- Configuration
- Single
- Ürün Durumu
- Active
- Fabrika Paket Adedi
- 8000
- Dc Current Gain Hfe Min Ic Vce
- 35 @ 5mA, 10V
- Vce Saturation Max Ib Ic
- 150mV @ 500μA, 5mA
- Polaritychannel Type
- PNP
- Transistor Polarity
- Single PNP
- Moisture Sensitivity Levels
- 1
- Pd Power Dissipation
- 150 mW
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