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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Transistor Application
- AMPLIFIER
- RoHS Durumu
- ROHS3 Compliant
- Vce Saturation Max Ib Ic
- 550mV @ 1.25mA, 50mA
- Current Collector Cutoff Max
- 100nA
- Parça Durumu
- Not For New Designs
- Terminal Formu
- GULL WING
- Terminal Sayısı
- 3
- Element Configuration
- Single
- Voltage Rated Dc
- 45V
- Gain Bandwidth Product
- 125MHz
- Emitter Base Voltage Vebo
- 5V
- JESD-609 Kodu
- e1
- Montaj
- Surface Mount
- Polaritychannel Type
- NPN
- Ambalaj
- Tape & Reel (TR)
- Collectorbase Capacitancemax
- 4.5pF
- Terminal
- SMD/SMT
- Number Of Elements
- 1
- Kurşunsuz Kodu
- yes
- Reach Svhc
- No SVHC
- Continuous Collector Current
- 200mA
- Power Dissipation
- 200mW
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2011
- Transistor Type
- NPN
- Pin Sayısı
- 3
- Contact Plating
- Copper, Silver, Tin
- Hfemin
- 250
- Max Power Dissipation
- 350mW
- Tepe Reflow Sıcaklığı (°C)
- 260
- ECCN Kodu
- EAR99
- Transition Frequency
- 125MHz
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collector Base Voltage Vcbo
- 45V
- Terminal Pozisyonu
- DUAL
- Akım Değeri
- 200mA
- Collectoremitter Breakdown Voltage
- 45V
- Collector Emitter Voltage Vceo
- 45V
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