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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Gain Bandwidth Product
- 200MHz
- Power Dissipation
- 200mW
- RoHS Durumu
- ROHS3 Compliant
- Dc Current Gainmin Hfe
- 200
- Contact Plating
- Copper, Silver, Tin
- Fabrika Tedarik Süresi
- 13 Weeks
- Collector Emitter Voltage Vceo
- 45V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Surface Mount
- Vce Saturation Max Ib Ic
- 600mV @ 5mA, 100mA
- Voltage Rated Dc
- 45V
- Polaritychannel Type
- NPN
- Yayın Yılı
- 2005
- Collector Base Voltage Vcbo
- 50V
- Emitter Base Voltage Vebo
- 6V
- Current Collector Cutoff Max
- 15nA ICBO
- Terminal Formu
- GULL WING
- Terminal Pozisyonu
- DUAL
- Kurşunsuz
- Lead Free
- Parça Durumu
- Active
- HTS Kodu
- 8541.21.00.75
- Number Of Elements
- 1
- Pin Sayısı
- 3
- JESD-609 Kodu
- e1
- Transistor Application
- AMPLIFIER
- Max Breakdown Voltage
- 45V
- Ambalaj
- Tape & Reel (TR)
- Element Configuration
- Single
- Tepe Reflow Sıcaklığı (°C)
- 260
- Tepe Reflow Süresi (maks. sn)
- 10
- Hfemin
- 200
- Kurşunsuz Kodu
- yes
- Çalışma Sıcaklığı
- 150°C TJ
- Max Power Dissipation
- 350mW
- Akım Değeri
- 100mA
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Terminal Sayısı
- 3
- Transistor Type
- NPN
- Radyasyon Dayanımı
- No
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