Volume pricing
- 1+ pcs$0.08
- 500+ pcs$0.06
- 1000+ pcs$0.05
- 2000+ pcs$0.04
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Frekans
- 300MHz
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- DUAL
- Collector Base Voltage Vcbo
- 15V
- Max Breakdown Voltage
- 12V
- Radyasyon Dayanımı
- No
- Montaj Tipi
- Surface Mount
- Yayın Yılı
- 2007
- Max Power Dissipation
- 800mW
- Collectoremitter Saturation Voltage
- 140mV
- Continuous Collector Current
- 2A
- Dc Current Gain Hfe Min Ic Vce
- 270 @ 100mA 2V
- Max Collector Current
- 2A
- Voltage Rated Dc
- 12V
- Kılıf / Paket
- 3-SMD, Flat Lead
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Transistor Type
- NPN
- ECCN Kodu
- EAR99
- Transistor Application
- AMPLIFIER
- Uzunluk
- 2mm
- Akım Değeri
- 2A
- Power Dissipation
- 800mW
- Element Configuration
- Single
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kurşunsuz Kodu
- yes
- Hfemin
- 270
- Transition Frequency
- 300MHz
- Tepe Reflow Süresi (maks. sn)
- 10
- Çalışma Sıcaklığı
- 150°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Collector Emitter Voltage Vceo
- 12V
- Collectoremitter Breakdown Voltage
- 12V
- Fabrika Tedarik Süresi
- 13 Weeks
- Polaritychannel Type
- NPN
- Current Collector Cutoff Max
- 100nA ICBO
- Genişlik
- 1.7mm
- Number Of Elements
- 1
- Contact Plating
- Copper, Tin
- Yükseklik
- 770μm
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