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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Hfemin
- 120
- Kurşunsuz Kodu
- yes
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Element Configuration
- Single
- Akım Değeri
- 3A
- Transistor Application
- AMPLIFIER
- HTS Kodu
- 8541.21.00.75
- ECCN Kodu
- EAR99
- Transistor Type
- NPN
- Terminal Sayısı
- 3
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-243AA
- Voltage Rated Dc
- 20V
- Max Collector Current
- 3A
- Dc Current Gain Hfe Min Ic Vce
- 180 @ 100mA 2V
- Continuous Collector Current
- 3A
- Max Power Dissipation
- 500mW
- Yayın Yılı
- 2009
- Montaj Tipi
- Surface Mount
- Max Breakdown Voltage
- 20V
- Radyasyon Dayanımı
- No
- Collector Base Voltage Vcbo
- 40V
- Transistor Element Material
- SILICON
- Vcesatmax
- 0.5 V
- Vce Saturation Max Ib Ic
- 500mV @ 100mA, 2A
- Temel Parça No
- 2SD2150
- Terminal Formu
- FLAT
- Montaj
- Surface Mount
- Parça Durumu
- Not For New Designs
- Terminal Kaplaması
- TIN COPPER
- Gain Bandwidth Product
- 290MHz
- Pin Sayısı
- 3
- Ambalaj
- Tape & Reel (TR)
- Kurşunsuz
- Lead Free
- Emitter Base Voltage Vebo
- 6V
- JESD-609 Kodu
- e2
- Tepe Reflow Sıcaklığı (°C)
- 260
- Contact Plating
- Copper, Tin
- Reach Svhc
- No SVHC
- Number Of Elements
- 1
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