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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Collector Base Voltage Vcbo
- 100V
- Max Breakdown Voltage
- 100V
- Radyasyon Dayanımı
- No
- Additional Feature
- BUILT IN BIAS RESISTANCE RATIO IS 0.0857
- Yayın Yılı
- 1999
- Montaj Tipi
- Surface Mount
- Collectoremitter Saturation Voltage
- 1.5V
- Continuous Collector Current
- 2A
- Max Power Dissipation
- 1W
- Dc Current Gain Hfe Min Ic Vce
- 1000 @ 1A 2V
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Voltage Rated Dc
- 100V
- Max Collector Current
- 2A
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 2
- Transistor Type
- NPN - Darlington
- Pin Sayısı
- 3
- HTS Kodu
- 8541.29.00.75
- Akım Değeri
- 2A
- Uzunluk
- 6.5mm
- Power Max
- 10W
- Element Configuration
- Single
- Power Dissipation
- 1W
- Terminal
- SMD/SMT
- Hfemin
- 1000
- Kurşunsuz Kodu
- yes
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Süresi (maks. sn)
- 10
- Transition Frequency
- 80MHz
- Çalışma Sıcaklığı
- 150°C TJ
- Fabrika Tedarik Süresi
- 20 Weeks
- Collectoremitter Breakdown Voltage
- 100V
- RoHS Durumu
- ROHS3 Compliant
- Case Connection
- COLLECTOR
- Collector Emitter Voltage Vceo
- 100V
- Genişlik
- 5.5mm
- Current Collector Cutoff Max
- 10μA ICBO
- Contact Plating
- Copper, Tin
- Reach Svhc
- No SVHC
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