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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Radyasyon Dayanımı
- No
- Max Breakdown Voltage
- 80V
- Collector Base Voltage Vcbo
- 120V
- Montaj Tipi
- Surface Mount
- Yayın Yılı
- 2009
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 500mA 3V
- Max Power Dissipation
- 2W
- Continuous Collector Current
- 1A
- Transistor Type
- NPN
- Terminal Sayısı
- 3
- Pin Sayısı
- 3
- ECCN Kodu
- EAR99
- Max Collector Current
- 1A
- Kılıf / Paket
- TO-243AA
- Voltage Rated Dc
- 80V
- Transistor Application
- SWITCHING
- HTS Kodu
- 8541.21.00.95
- Akım Değeri
- 1A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Hfemin
- 82
- Kurşunsuz Kodu
- yes
- Terminal
- SMD/SMT
- Element Configuration
- Single
- Power Dissipation
- 500mW
- Çalışma Sıcaklığı
- 150°C TJ
- Tepe Reflow Süresi (maks. sn)
- 10
- Transition Frequency
- 100MHz
- Current Collector Cutoff Max
- 1μA ICBO
- Polaritychannel Type
- NPN
- RoHS Durumu
- ROHS3 Compliant
- Case Connection
- COLLECTOR
- Collector Emitter Voltage Vceo
- 80V
- Collectoremitter Breakdown Voltage
- 80V
- Reach Svhc
- No SVHC
- Number Of Elements
- 1
- Contact Plating
- Copper, Tin
- JESD-609 Kodu
- e2
- Tepe Reflow Sıcaklığı (°C)
- 260
- Emitter Base Voltage Vebo
- 5V
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