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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2005
- Number Of Elements
- 1
- Montaj Tipi
- Through Hole
- Tepe Reflow Sıcaklığı (°C)
- 260
- Max Power Dissipation
- 1W
- JESD-609 Kodu
- e1
- Dc Current Gain Hfe Min Ic Vce
- 1000 @ 1A 2V
- Tepe Reflow Süresi (maks. sn)
- 10
- Vcesatmax
- 1.5 V
- Transition Frequency
- 80MHz
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- 150°C TJ
- Collectoremitter Breakdown Voltage
- 100V
- Collector Base Voltage Vcbo
- 100V
- RoHS Durumu
- ROHS3 Compliant
- Collector Emitter Voltage Vceo
- 100V
- Radyasyon Dayanımı
- No
- Current Collector Cutoff Max
- 10μA ICBO
- Additional Feature
- BUILT IN BIAS RESISTANCE RATIO IS 0.0857
- Parça Durumu
- Obsolete
- Akım Değeri
- 2A
- Terminal Kaplaması
- TIN SILVER COPPER
- Polarity
- NPN
- Montaj
- Through Hole
- Element Configuration
- Single
- Hfemin
- 1000
- Vce Saturation Max Ib Ic
- 1.5V @ 1mA, 1A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kılıf / Paket
- 3-SIP
- Voltage Rated Dc
- 100V
- Max Collector Current
- 2A
- Emitter Base Voltage Vebo
- 6V
- ECCN Kodu
- EAR99
- Transistor Type
- NPN - Darlington
- Terminal Sayısı
- 3
- Frequency Transition
- 80MHz
- Pin Sayısı
- 3
- HTS Kodu
- 8541.29.00.75
- Kurşunsuz
- Lead Free
- Transistor Application
- SWITCHING
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