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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tepe Reflow Sıcaklığı (°C)
- 260
- Max Power Dissipation
- 1W
- JESD-609 Kodu
- e1
- Dc Current Gain Hfe Min Ic Vce
- 180 @ 500mA 3V
- Qualification Status
- Not Qualified
- Yayın Yılı
- 2001
- Number Of Elements
- 1
- Montaj Tipi
- Through Hole
- Collectoremitter Breakdown Voltage
- 50V
- Collector Base Voltage Vcbo
- 60V
- Collector Emitter Voltage Vceo
- 1V
- RoHS Durumu
- ROHS3 Compliant
- Max Breakdown Voltage
- 50V
- Current Collector Cutoff Max
- 1μA ICBO
- Polaritychannel Type
- NPN
- Tepe Reflow Süresi (maks. sn)
- 10
- Transition Frequency
- 90MHz
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- 150°C TJ
- Element Configuration
- Single
- Hfemin
- 180
- Jesd30 Code
- R-PSIP-T3
- Vce Saturation Max Ib Ic
- 1V @ 200mA, 2A
- Temel Parça No
- 2SD1864
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Obsolete
- Akım Değeri
- 3A
- Terminal Kaplaması
- TIN SILVER COPPER
- Gain Bandwidth Product
- 90MHz
- Montaj
- Through Hole
- HTS Kodu
- 8541.29.00.75
- Kurşunsuz
- Lead Free
- Ambalaj
- Tape & Box (TB)
- Transistor Application
- SWITCHING
- Kılıf / Paket
- 3-SIP
- Voltage Rated Dc
- 50V
- Emitter Base Voltage Vebo
- 5V
- Max Collector Current
- 3A
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 3
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