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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transition Frequency
- 120MHz
- Tepe Reflow Süresi (maks. sn)
- 10
- Çalışma Sıcaklığı
- 150°C TJ
- Transistor Element Material
- SILICON
- Collector Base Voltage Vcbo
- 80V
- Collectoremitter Breakdown Voltage
- 80V
- Collector Emitter Voltage Vceo
- 400mV
- RoHS Durumu
- ROHS3 Compliant
- Max Breakdown Voltage
- 80V
- Polaritychannel Type
- NPN
- Current Collector Cutoff Max
- 500nA ICBO
- Yayın Yılı
- 2004
- Montaj Tipi
- Through Hole
- Number Of Elements
- 1
- Collectoremitter Saturation Voltage
- 200mV
- Tepe Reflow Sıcaklığı (°C)
- 260
- Max Power Dissipation
- 1W
- JESD-609 Kodu
- e1
- Qualification Status
- Not Qualified
- Dc Current Gain Hfe Min Ic Vce
- 180 @ 100mA 3V
- Voltage Rated Dc
- 80V
- Kılıf / Paket
- 3-SIP
- Max Collector Current
- 700mA
- Emitter Base Voltage Vebo
- 5V
- ECCN Kodu
- EAR99
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Transistor Type
- NPN
- Kurşunsuz
- Lead Free
- Ambalaj
- Tape & Box (TB)
- Transistor Application
- SWITCHING
- Terminal Kaplaması
- TIN SILVER COPPER
- Parça Durumu
- Obsolete
- Akım Değeri
- 700mA
- Gain Bandwidth Product
- 120MHz
- Montaj
- Through Hole
- Element Configuration
- Single
- Jesd30 Code
- R-PSIP-T3
- Kurşunsuz Kodu
- yes
- Hfemin
- 120
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